| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma assisted sputtering film-forming apparatus capable of supplying constant sputtering rate of the target member with time and making an invariable process condition. SOLUTION: The plasma assisted sputtering film-forming apparatus yields a uniform sputtering rate with time. It has a reactor 1 with an upper electrode 2 and a lower electrode 3. A substrate 8 is placed on the lower electrode.Further it is comprised of a target member 2a, a plurality of magnets 4 and power sources 15 and 19. The magnets have an equal distance between any two of them and have alternate polarity, and they are arranged over the upper surface of the target member with the capability to move in a vertical direction. The power sources include an rf power source operating a frequency in the range of 10 MHz to 300MHz and/or a DC power source connected to the upper electrode. COPYRIGHT: (C)2004,JPO
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