发明名称 Nonvolatile memory device having circuit for stably supplying desired current during data writing
摘要 A memory block is divided into block units for which parallel data write is performed. Current supply sections capable of supplying a power supply voltage and a ground voltage are provided for block units, independently of one another. With this configuration, in each block unit, writing of data to a selected memory cell is performed by a data write current from the independent current supply section connected to the power supply voltage and the ground voltage. That is, wiring lengths of power supply lines for supplying the power supply voltage and the ground voltage can be shortened. It is therefore possible to suppress a wiring resistance of the power supply line and to supply a desired data write current.
申请公布号 US2004109377(A1) 申请公布日期 2004.06.10
申请号 US20030456530 申请日期 2003.06.09
申请人 RENESAS TECHNOLOGY CORP. 发明人 OOISHI TSUKASA
分类号 G11C11/15;G11C5/14;G11C8/00;G11C11/00;G11C11/16;G11C11/34;G11C16/00;G11C16/10;G11C16/26;(IPC1-7):G11C8/00 主分类号 G11C11/15
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