| 摘要 |
PURPOSE: A split gate type flash memory device having a mis-aligned margin is provided to be capable of locating floating gate patterns on different lines. CONSTITUTION: A split gate type flash memory device having a mis-aligned margin is provided with the first, second, and third isolation line(Fox1,Fox2,Fox3) spaced apart from each other on a semiconductor substrate for defining an active region(ARN), and a plurality of split gate lines. The split gate line includes the first floating gate pattern(FG1) for partially enclosing the first and second isolation line, and the first active region between the first and second isolation line, and the second floating gate pattern(FG2) for partially enclosing the second and third isolation line, and the second active region between the second and third isolation line. The first and second floating gate pattern are located at different portions. The split gate line further includes a word line(WL) for partially enclosing the first and second floating gate pattern and crossing the first to third isolation line.
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