| 摘要 |
PURPOSE: A method for forming an isolation layer of a semiconductor device is provided to maximize the corner rounding of a trench and prevent the edge moat of the trench by forming an SAC(SACrification) oxide layer and the second oxide layer in the trench. CONSTITUTION: A semiconductor substrate(100) is partially exposed by selectively etching a pad nitride and oxide layer(140,120). An impurity region is formed in the exposed semiconductor substrate by implanting predetermined ions. The first oxide layer is grown by oxidizing the impurity region. At this time, the second oxide layer is formed at the lower portion of the pad nitride layer. A trench(240) is formed in the semiconductor substrate by etching the first oxide layer and the semiconductor substrate while leaving the second oxide. An SAC oxide layer(260) is formed on the surface of the trench. The third oxide layer for planarization is formed on the entire surface of the resultant structure.
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