| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve adhesion between rewiring of the uppermost layer consisting of copper and an overcoat film in a semiconductor device having the rewiring and the overcoat film. <P>SOLUTION: A cupric oxide layer 14 and a cuprous oxide layer 15 are provided in this order on the surface except for the connection pad of second upper layer rewiring 13 consisting of copper. Consequently, as compared with a case without the cupric oxide layer 14 and the cuprous oxide layer 15, the adhesion is improved between the second upper layer rewiring 13 consisting of copper and a third insulating film (overcoat film) 17 consisting of a polyimide or epoxy based resin or the like, and moisture resistance can be improved. <P>COPYRIGHT: (C)2004,JPO |
