摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light-emitting device which uses an ITO electrode layer as an electrode for light emission drive and achieves a uniform and high radiation intensity according to an area of the device on the assumption that the device is applied to a light-emitting device with a large surface of 400 μm or larger. <P>SOLUTION: In a light-emitting device 100, at least one of the major surfaces of a light-emitting layer 24, which is composed of a compound semiconductor, is covered with an ITO electrode layer 20 serving as a light extracting surface electrode. When the major surface of the light-emitting layer 24 is converted into a square, a side L is 400 μm or longer. Further, a thickness t of the ITO electrode 20 is 400 nm or larger. <P>COPYRIGHT: (C)2004,JPO |