发明名称 LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a light-emitting device which uses an ITO electrode layer as an electrode for light emission drive and achieves a uniform and high radiation intensity according to an area of the device on the assumption that the device is applied to a light-emitting device with a large surface of 400 &mu;m or larger. <P>SOLUTION: In a light-emitting device 100, at least one of the major surfaces of a light-emitting layer 24, which is composed of a compound semiconductor, is covered with an ITO electrode layer 20 serving as a light extracting surface electrode. When the major surface of the light-emitting layer 24 is converted into a square, a side L is 400 &mu;m or longer. Further, a thickness t of the ITO electrode 20 is 400 nm or larger. <P>COPYRIGHT: (C)2004,JPO
申请公布号 JP2004165654(A) 申请公布日期 2004.06.10
申请号 JP20030363363 申请日期 2003.10.23
申请人 SHIN ETSU HANDOTAI CO LTD;NANOTECO CORP 发明人 YAMADA MASAHITO;NOTO NOBUHIKO;SUZUKI KINGO;NOZAKI SHINJI;UCHIDA KAZUO;MORIZAKI HIROSHI
分类号 H01L21/28;H01L21/285;H01L33/12;H01L33/16;H01L33/30;H01L33/38;H01L33/42 主分类号 H01L21/28
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