| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a composition for forming a porous film that forms a porous film having excellent dielectric characteristics, adhesiveness, coating uniformity, mechanical strength and reduced hygroscopicity and a high performance and reliable semiconductor device incorporating the porous film. <P>SOLUTION: The composition for forming a porous film is obtained by adding not less than one kind of quaternary ammonium salt as expressed by general formula (1) or (2); [(R<SP>1</SP>)<SB>4</SB>N]<SP>+</SP>[R<SP>2</SP>X]<SP>-</SP>(1); H<SB>k</SB>[(R<SP>1</SP>)<SB>4</SB>N]<SB>m</SB><SP>+</SP>Y<SP>n-</SP>(2) (wherein X is CO<SB>2</SB>, OSO<SB>3</SB>, or SO<SB>3</SB>; Y is SO<SB>4</SB>, SO<SB>3</SB>, CO<SB>3</SB>, O<SB>2</SB>C-CO<SB>2</SB>, NO<SB>3</SB>or NO<SB>2</SB>; k is 0 or 1; m and n are each 1 or 2; when n is 1, k is 0 and m is 1; when n is 2, k is 0 and m is 2, or k is 1 and m is 1.). <P>COPYRIGHT: (C)2004,JPO |
