SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device employing an STI (shallow trench isolation) method, which keeps high degree of flatness without causing dishing or erosion in an CMP (chemical mechanical polishing) process for forming an element isolation region. SOLUTION: The semiconductor device having a region isolated by the STI method on a semiconductor substrate comprises a device region for forming the semiconductor device, a dummy device region 13b, and an oxide film 4 for isolating the device region from the dummy device region 13b. The dummy device region 13b is provided with a cap layer 15 for preventing the dummy device region 13b from turning into silicide. COPYRIGHT: (C)2004,JPO