| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma etching device, hardly generating arcing on a substrate or especially a semiconductor wafer under processing. SOLUTION: The plasma etching device is equipped with a chamber 1 for receiving a substrate to be processed or the semiconductor wafer W, a plasma producing means 15 for producing the plasma of processing gas in the chamber 1, a mounting table 2 provided in the chamber 1 to mount the substrate to be processed or the semiconductor wafer W, and an annular member 5 provided around the semiconductor wafer W on the mounting table 2. The outer diameter of the annular member 5 is designed so as to hardly generate arc discharge on the semiconductor wafer W. COPYRIGHT: (C)2004,JPO
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