| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an effective means to improve EMI and EMS without changing the area of a semiconductor device. <P>SOLUTION: In the semiconductor device, a bypass capacitor between power supplies can be formed between I/O power supplies, and a low impedance connection structure in which a power supply wiring distance is minimized as much as possible can be provided by connecting the gate 2 of an n-type transistor formed below a pad to the VDD power supply 15 of the I/O circuit, and connecting the diffusion region 3 to the VSS power supply 17 of the I/O circuit. This is effective to the reduction of the EMI and the improvement of the EMS while the accommodation of the I/O circuit can remarkably contribute to highly improve the quality of an LSI. <P>COPYRIGHT: (C)2004,JPO |
