| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device comprising a transistor exhibiting excellent on current characteristics and off-leak current characteristics, an electro-optical device holding an electro-optical substance by the semiconductor device, an electronic apparatus employing the electro-optical device, and a method for manufacturing the semiconductor device. SOLUTION: In a transistor 40A, a source region 420 and a drain region 430 are heavily doped regions where impurities are introduced in self-alignment with a gate electrode 460. A gate insulating film 450 at a part of a channel forming region 410 overlapping the boundary regions 412 and 413 contiguous to the drain region 430 and source region 420 is formed thicker than the gate insulating film 450 at a part of the channel forming region 410 overlapping the central part 411 in the longitudinal direction of channel. COPYRIGHT: (C)2004,JPO |
