| 摘要 |
PROBLEM TO BE SOLVED: To make bias setting easily executable without being influenced by a variation in the manufacturing process of a MOSFET nor the fluctuation of a p-n junction temperature at the time of changing p-n junction between a body and a source of the MOSFET to a shallow forward bias, by applying a certain voltage to the back gate of the MOSFET for reducing 1/f noise generated in the MOSFET. SOLUTION: A diode which applies a bias voltage to the back gate of the MOSFET by which the 1/F noise is reduced is disposed adjacently to the MOSFET. The disposed diode uses junction which is equivalent to the p-n junction between the source and bulk of the MOSFET and the bias voltage is applied to the back gate of the MOSFET by using a voltage generated across the anode and cathode of the diode when the diode is driven by a constant current having a certain current value. COPYRIGHT: (C)2004,JPO
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