| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having an off withstand voltage or a high driving performance, or to provide a semiconductor device having the off withstand voltage and the high driving performance, and to provide a method for forming these semiconductor devices. SOLUTION: A concentration distribution in a depthwise direction of a first impurity diffusion layer 105 and a second impurity diffusion layer 115 working as a drift region are approximately uniformly formed by ion implantation of equal to or more than three times with their implantation conditions matched. Especially, the concentration distribution in the depthwise direction of each of the impurity distribution layers 105 and 115 are approximately uniform in the stage of ion implantation so that a long-time heat treatment at high temperatures is not necessary. COPYRIGHT: (C)2004,JPO
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