发明名称 |
TEOS assisted oxide CMP process |
摘要 |
CMP of integrated circuits containing DRAM arrays with trench capacitors fill the trenches with oxide, resulting in a an array of oxide structures that is dense compared with the concentration in the surrounding support structures and therefore has a higher loading. A conformal layer is deposited over the wafer, increasing the loading in the array, but filling in spaces between active areas. A blanket etch removes material in both the array and the supports. A block etch balances the amount of material in the array and the supports. A supplementary oxide deposition in the array fills spaces between the structures to a nearly uniform density.
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申请公布号 |
US2004110380(A1) |
申请公布日期 |
2004.06.10 |
申请号 |
US20020314865 |
申请日期 |
2002.12.09 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;INFINEON TECHNOLOGIES NORTH AMERICA CORP. |
发明人 |
BEINTNER JOCHEN;ECONOMIKOS LAERTIS;WISE MICHAEL;KNORR ANDREAS |
分类号 |
H01L21/304;H01L21/302;H01L21/3105;H01L21/461;H01L21/768;H01L21/8242;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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