发明名称 Detecting method for dry etching machine
摘要 A detecting method for the dry etching machine under the semiconductor process is introduced. A certain number of wafers are sequentially performed with a dry etching process, wherein the Vpp value of each wafer under the etching process is recorded. Next, the Vpp values are processed by a mathematical algorithm, for eliminating some unreasonable values. Then, a Vpp range under the normal operation condition is obtained, based one the prediction from the mathematical algorithm, and is sent to the control system of the dry etching machine. The Vpp value of the wafer is compared to the Vpp range. If the Vpp value is within the Vpp range then it indicates a normal operation. If the Vpp value is out of the Vpp range, then the control system of the etching machine automatically stops the machine and issues a warning signal by voice or by E-mail or pager, so as to inform the operator to adjust the fabrication parameters for dry etching machine.
申请公布号 US2004110384(A1) 申请公布日期 2004.06.10
申请号 US20030604836 申请日期 2003.08.21
申请人 LEE SZETSEN STEVEN 发明人 LEE SZETSEN STEVEN
分类号 H01J37/32;H01L21/00;(IPC1-7):H01L21/302;H01L21/461 主分类号 H01J37/32
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