| 摘要 |
A system and methodology are disclosed for forming a passive layer (30, 106, 212) on a conductive layer (110, 402, 602, 808). The formation can be done during fabrication of an organic memory cell, where the passive layer (30, 106, 2,12) generally includes a conductivity facilitating compound (106, 406, 614, 1212), such as copper sulfide (CUZS). The conductivity facilitating compound (106, 406, 614, 1212) is deposited onto the conductive layer (110, 402, 602, 808) via plasma enhanced chemical vapor deposition (PECVD) (200, 800, 1200) utilizing a metal organic (MO) precursor (408, 616). The precursor (408, 616) facilitates depositing the conductivity facilitating compound (106, 406, 614, 1212) in the absence of toxic hydrogen sulfide (HZS), and at a relatively low temperature and pressure (e.g., between about 400 to 600 K and 0.05 to 0.5 Pa., respectively). The deposition process can be monitored and controlled to facilitate, among other things, depositing the conductivity facilitating compound to a desired thickness. |
