| 摘要 |
Disclosed is a treatment method of annealing and doping a semiconductor comprising steps of irradiating a semiconductor layer (13) formed on a substrate (11) with a laser beam (a), thereby melting at least a part of the semiconductor layer; irradiating a target material (2) including atoms with which the semiconductor layer is to be doped with the laser beam (a'), thereby ablating the atoms of the target material; and doping the melted semiconductor layer with the ablated atoms.
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