发明名称 |
INSULATING FILM MATERIAL CONTAINING ORGANIC SILANE OR ORGANIC SILOXANE COMPOUND, METHOD FOR PRODUCING SAME, AND SEMICONDUCTOR DEVICE |
摘要 |
<p>An insulating film material from which an insulating film is formed by a chemical vapor deposition method and which is preferably used as an interlayer insulating film material for semiconductor devices is disclosed. An insulating film made from this material and a semiconductor device using such an insulating film are also disclosed. The insulating film material contains an organic silicon compound which is represented by one of the formulae (1)-(4) and composed of either an organic silane compound, wherein a silicon atom is directly bonded with a secondary hydrocarbon group and an alkenyl group or with an alkenyl group, or an organic siloxane compound, wherein a silicon atom is directly bonded with a secondary hydrocarbon group and/or an alkenyl group. With this insulating film material, an insulating film is formed through chemical vapor deposition growth of the organic silicon compound.</p> |
申请公布号 |
WO2004049422(A1) |
申请公布日期 |
2004.06.10 |
申请号 |
WO2003JP15281 |
申请日期 |
2003.11.28 |
申请人 |
TOSOH CORPORATION;HARA, DAIJI;YOSHIDA, KEISUKE |
发明人 |
HARA, DAIJI;YOSHIDA, KEISUKE |
分类号 |
B05D7/24;C07F7/18;C07F7/21;C23C16/40;H01L21/312;H01L21/316;(IPC1-7):H01L21/312 |
主分类号 |
B05D7/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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