| 摘要 |
PURPOSE: A thin film transistor(TFT) for an LCD(Liquid Crystal Display) with an integrated drive circuit and a manufacturing method thereof are provided to change a structure of the TFT, reduce the number of masks by using a counter doping, and reduce the number of processes and shorten the processing time, thereby providing a TFT having an enhanced yield. CONSTITUTION: A buffer layer(205) comprised of inorganic material such as SiO2 is formed on an insulation substrate(200). A semiconductor layer(210) is formed on the buffer layer(205). An N type ohmic contact layer(210c), an LDD layer(210b) connected to the ohmic contact layer(210c) and an active channel layer(210a) corresponding to a gate electrode(230) between the LDD layers(210b) are formed at a part of both ends of the semiconductor layer(210). A gate insulation film(225) is formed on source/drain electrodes(260a,260b), the exposed semiconductor layer(210) and the buffer layer(205). The gate electrode(230) is formed on the gate insulation film(225) so that it may be overlapped with the active channel layer(210a). A passivation layer(270) is formed on the exposed gate insulation film(225) including the gate electrode(230).
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