发明名称 SEMICONDUCTOR MEMORY DEVICE HAVING REDUNDANCY CELL BLOCK TO IMPROVE REDUNDANCY EFFICIENCY
摘要 PURPOSE: A semiconductor memory device having a redundancy cell block tp improve redundancy efficiency is provided to improve the redundancy efficiency by replacing a defective memory cell with a redundancy cell of a redundancy cell block which is always activated. CONSTITUTION: A redundancy cell block(250) has a plurality of redundancy cells(RED20,RED21,RED22,RED23) for replacing a memory cell in case of a failure in the memory cell within a plurality of memory cell blocks(210,220,230,240). One of the plurality of memory cell blocks(210,220,230,240) is activated in response to a predetermined select signal. The redundancy cell block(250) is activated regardless of activation of the memory cell blocks(210,220,230,240).
申请公布号 KR20040048737(A) 申请公布日期 2004.06.10
申请号 KR20020076696 申请日期 2002.12.04
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JUNG, WON CHANG;LEE, YUN SANG
分类号 G11C29/00;(IPC1-7):G11C29/00 主分类号 G11C29/00
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