| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a poled crystal with domain inversion with which protrusion of a polarity inversion domain to the outside is suppressed in a positive way. <P>SOLUTION: In one plate surface (a +Z surface and/or a -Z surface) of a ferroelectric crystal substrate 1, an inversion suppressing layer 2 is formed on at least a domain where polarity inversion is not to take place out of a periodical polarity inversion structure to be formed. Furthermore, an upper side electrode 3 is disposed directly or via the inversion suppressing layer 2 on a region where the polarity inversion is to take place so as to apply a polarity inversion voltage between it and a lower electrode 4 disposed on the other plate surface of the substrate 1. A material of the inversion suppressing layer 2 is preferably Mo or its alloy or its compound with respect to the +Z surface and is preferably Cr, Ni, Ti or a material selected from their alloys or their compounds with respect to the -Z surface. Owing to existence of the inversion suppressing layer 2, even when a polarity inversion electric field is applied to the part, advance of the polarity inversion caused by contact with the material is suppressed and an excellent polarity inversion structure is obtained. <P>COPYRIGHT: (C)2004,JPO</p> |
