摘要 |
<p>A semiconductor device structure, includes a PMOS device (200) and an NMOS device (300) disposed on a substrate (1, 2) the PMOS device including a compressive layer (6) stressing an active region of the PMOS device, the NMOS device including a tensile layer (9) stressing an active region of the NMOS device, wherein the compressive layer includes a first dielectric material, the tensile layer includes a second dielectric material, and the PMOS and NMOS devices are FinFET devices (200, 300).</p> |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;DORIS, BRUCE, B.;CHIDAMBARRAO, DURESETI;IEONG, MEIKEI;MANDELMAN, JACK, A. |
发明人 |
DORIS, BRUCE, B.;CHIDAMBARRAO, DURESETI;IEONG, MEIKEI;MANDELMAN, JACK, A. |