PROCESS FOR ENHANCEMENT OF RESOLUTION OF CHEMICALLY AMPLIFIED PHOTORESIST AND STRUCTURE FOR FORMING SEMICONDUCTOR DEVICE USING THE SAME

摘要

PURPOSE: A process for enhancing resolution of chemically amplified photoresist is provided to form a relief image of the photoresist and reducing the size of the relief image to another size. CONSTITUTION: The process comprises steps of forming a first size relief image then contacting the image to aqueous acidic solution for a desired period of time to reduce the first size image into a second size image. A structure(10) for forming a semiconductor device comprises a substrate(12) and the chemically amplified photoresist(14). A photoresist layer is lithographically patterned and developed to form the relief image. Movable hydrogen ion or hydronium ion in the aqueous acidic solution is diffused into the photoresist and acid labile moiety in the photoresist polymer material is released from the solution to form a de-protected resist layer.