发明名称 SEMICONDUCTOR DEVICE ABLE TO BE PRODUCED BY CONVERTING EMBEDDED MEMORY FROM RAM TO ROM, IN WHICH MASS PRODUCTION CHIP IS SUPPLIED RAPIDLY
摘要 PURPOSE: A semiconductor device is provided to convert a DRAM cell to a ROM by changing a slice mask, without changing a peripheral circuit layout for reading. CONSTITUTION: The semiconductor memory device(1) includes a row/column decoder(6) receiving an address signal(ADR) from a central processing unit(2), and a control circuit(4) receiving a command signal(CMD) from the CPU, and memory cell arrays(22,24,26,28) and sense amplifiers(30,32,34,36,38) and a preamp/write driver(40) and switches(12-18). Each memory cell array includes a memory cell(MC) and a bit line(BL) and a word line(WL). The row/column decoder selects the word line of the memory cell array(26) by receiving the address signal from the CPU. The switches performs the switching between a ROM and a RAM as to each memory cell array after a master slice process.
申请公布号 KR20040048799(A) 申请公布日期 2004.06.10
申请号 KR20030045611 申请日期 2003.07.07
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 FUJINO TAKESHI
分类号 G11C17/08;G11C11/00;G11C11/24;G11C11/40;G11C11/401;G11C11/4097;G11C17/12;H01L21/8239;H01L21/8242;H01L21/8246;H01L27/10;H01L27/105;H01L27/108;H01L27/112;(IPC1-7):G11C11/40 主分类号 G11C17/08
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