| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor unit capable of a high-speed operation, by contracting the wiring length of a branch wiring existent in its signal wiring. <P>SOLUTION: A semiconductor unit 104, constituting a memory device comprises a memory chip 120 and a package board 121, has three wiring layers. The wirings of power-supply surfaces 118 (a VDD surface), 119 (a GND surface) are formed in the package board 121, and the wiring of an intra-package DQ bus 114 is formed in an intermediate wiring layer, interposed between both the power-supply surfaces 118, 119. The memory device 120 has two DQ pins 112 inside the one intra-package DQ bus 114. The intra-package DQ bus 114 and a signal-terminal pad 115 of the memory chip 120 are connected through the intermediary of a via. The via, whereby the intra-package DQ bus 114 and the signal-terminal pad are connected, constitutes a branch wiring, as viewed from the two DQ pins. <P>COPYRIGHT: (C)2004,JPO</p> |
