| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To prevent occurrence of dielectric breakdown and leakage due to insulation failure of a gate insulating layer of a thin film transistor. <P>SOLUTION: A first semiconductor layer 15 to which a gate electrode 20 of a TFT 10 is capacitively coupled via a gate insulating layer 66, and a second semiconductor layer 16 to which a holding capacity line 42 of a holding capacity Csc is capacitively coupled via the gate insulating layer 66, are mutually separated and the first semiconductor layer 15 and the second semiconductor layer 16 are connected by a metal wiring 40. In other words, since the gate electrode 20 of the TFT 10 is capacitively coupled to the first semiconductor layer 15, and the holding capacity line 42 of the holding capacity Csc is capacitively coupled to the second semiconductor layer 16 separately so that potential of the respective semiconductor layers change by the coupling, a large potential difference will not be generated in the gate insulating layer 66 and occurrence of breakdown and leakage due to insulation failure is prevented. <P>COPYRIGHT: (C)2004,JPO</p> |
