发明名称 |
Novel method and systems to print contact hole patterns |
摘要 |
A method for forming an arbitrary pattern of sub-micron contact holes in a substrate using a combination of interferometric photolithography and optical photolithography with a non-critical mask. The substrate is covered with a photosensitive material and is exposed by a standing wave interference pattern produced by the superposition of two coherent laser beams. Then the substrate is rotated through 90° and exposed by the same pattern. The double exposure produces a regular array of sub-micron unexposed regions which are all potentially holes if developed. The photosensitive material is then covered by a non-critical photomask and a standard light source is used to exposed those areas of the photosensitive material containing unwanted holes. Upon final development, the desired pattern is obtained.
|
申请公布号 |
US2004110092(A1) |
申请公布日期 |
2004.06.10 |
申请号 |
US20020309427 |
申请日期 |
2002.12.04 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY |
发明人 |
LIN CHIN-HSIANG |
分类号 |
G03F7/00;G03F7/20;(IPC1-7):G03F7/20 |
主分类号 |
G03F7/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|