METHOD FOR CLEANING SUBSTRATE PROCESSING CHAMBER

摘要

A method for cleaning a substrate processing chamber which causes less damage to members in the substrate processing chamber is disclosed. The method for cleaning a processing chamber of an apparatus for processing a substrate comprises a gas supply step wherein a gas is supplied into a remote plasma generating unit provided to the substrate processing apparatus, a reacting species formation step wherein a reacting species is formed by exciting the gas in the remote plasma generating unit, and a reaction step wherein the reacting species is supplied into the processing chamber from the remote plasma generating unit while keeping the pressure within the processing chamber at 1333 Pa or higher.