| 摘要 |
PURPOSE: A method for forming an aluminum line of a semiconductor device is provided to prevent the corrosion of the aluminum line and restrain PID(Plasma Induced Damage) by thickly forming a uniform Al2O3 layer on the aluminum line. CONSTITUTION: A plurality of aluminum layers(213) are formed on a semiconductor substrate(201). An Al2O3 layer(215) is partially formed on the surface of each aluminum line by oxidizing the aluminum line. The Al2O3 layer is formed by adding O3 to the aluminum line at the temperature of 300-450 °C and at the pressure of 760-900 Torr for 30-120 second. The thickness of the Al2O3 is in the range of 50-200 angstrom.
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