| 发明名称 |
COMPOSITION CONTAINING HAFNIUM OXIDE AND SECOND COMPOUND, USE OF THE SAME, DEVICE OF THE SAME AND METHOD OF FORMING DIELECTRIC LAYER ON SUBSTRATE |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a composition having a novel crystal structure and a high dielectric constant. <P>SOLUTION: The novel composition contains HfO<SB>2</SB>and a second compound. The novel composition has a cubic crystalline phase. The novel composition is stable at temperature up to 1,200°C. The novel composition has a dielectric value higher than that of pure HfO<SB>2</SB>. The novel composition is used for the application of dielectric material in memory capacitor application and for the application as gate dielectric in transistor application. <P>COPYRIGHT: (C)2004,JPO |
| 申请公布号 |
JP2004161602(A) |
申请公布日期 |
2004.06.10 |
| 申请号 |
JP20030165399 |
申请日期 |
2003.06.10 |
| 申请人 |
INTERUNIV MICRO ELECTRONICA CENTRUM VZW |
发明人 |
CARTIER EDUARD;CHEN JERRY;ZHAO CHAO |
| 分类号 |
C01G27/00;C01G27/02;C23C16/40;C23C16/44;H01B3/10;H01L21/02;H01L21/28;H01L21/316;H01L21/8242;H01L27/108;H01L29/51;H01L29/78 |
主分类号 |
C01G27/00 |
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