| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an electronic element, having the junction structure of a plurality of fullerene-based materials, having different electrical characteristics from each other, and to provide a manufacturing method of the electronic element. <P>SOLUTION: By vacuum deposition of such fullerene molecules as C<SB>60</SB>, an n-type fullerene monomer layer 3 is formed on a substrate 1 in a vacuum chamber. Then, while sublimating the fullerene molecules, similar as in the case of their formations, energy for polymerizing them is fed to them by plasma excitation, light (electromagnetic wave) irradiation, or electron-beam impact. Thereby, the monomer molecules are polymerized as to form a p-type fullerene polymer layer 4 and laminate it on the fullerene monomer layer 3. Since the n-type and p-type layers can be formed in the identical chamber, a pn-junction device can be manufactured efficiently in less number of processes. Further, since the pn-junction device can be completed without exposing the monomer layer 3 to air, the monomer layer 3 can be prevented from deteriorating due to oxygen. <P>COPYRIGHT: (C)2004,JPO</p> |
