| 摘要 |
PROBLEM TO BE SOLVED: To realize a GaN-based field effect transistor having a very small on-resistance during operation and capable of a large current operation. SOLUTION: In the GaN-based field effect transistor having a source electrode S, a gate electrode G, a drain electrode D, a contact layer 6 being connected with the source electrode and the drain electrode D, and a conductive channel layer 3 where carriers drift, the contact layer 6 is buried directly in a part where the channel layer 3 is etched and the band gap of a semiconductor composing the contact layer 6 is set smaller than the band gap of a semiconductor composing the channel layer 3. Etching depth at a part for burying the contact layer 6 is set deeper than a position where the carriers drifting the channel layer are distributed. COPYRIGHT: (C)2004,JPO
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