发明名称 ETCHING METHOD AND ETCHING DEVICE
摘要 PROBLEM TO BE SOLVED: To provide etching method/device with which a good observation face can be obtained without damaging a layer lower than the observation face of a sample. SOLUTION: An HF solution 4 is put in a chemical solution tray 3, and it is placed on a work mat 1. An etching sample 6 is placed beside the chemical solution tray 3 on the work mat 1, and a sealing cover 2 is put on the etching sample 6 and the chemical solution tray 3. The sealing cover 2 is filled with HF gas generated from the HF solution 4 and etching is performed. Etching is once terminated in short time of 15 seconds, for example. The sealing cover 2 is opened and the etching sample 6 is taken out, cleaned and dried. An etching situation is confirmed, and etching (for 15 seconds), cleaning and drying are repeated if needed. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004165296(A) 申请公布日期 2004.06.10
申请号 JP20020327281 申请日期 2002.11.11
申请人 SHARP CORP 发明人 TAKASUKA MASAMI
分类号 H01L21/302;(IPC1-7):H01L21/302 主分类号 H01L21/302
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