发明名称 High voltage half bridge gate driver for MOSFET power transistors has soft disconnection protection step and diagnostic feedback using external power supply and control
摘要 An integrated gate driver circuit for a power transistor using an external power supply and external control comprises integrated input and output stages and an error circuit giving a soft gradual disconnection step to prevent overvoltage. An integrated gate driver circuit for a power transistor using an external power supply and control comprises an output step to establish an unsaturated condition and guide a soft gradual disconnection step so that overvoltage is prevented, a coupled input step which controls the output as a function of the external control and an error circuit coupled to input and output which stops and ignores input during the soft disconnection. The input and output stages and the error circuit are integrated into the circuit. Independent claims are also included for the following: (a) a multiphase system of gate drivers as above;and (b) two further circuits as above
申请公布号 DE10351033(A1) 申请公布日期 2004.06.09
申请号 DE20031051033 申请日期 2003.10.31
申请人 INTERNATIONAL RECTIFIER CORP., EL SEGUNDO 发明人 GALLI, GIOVANNI;GIANDALLA, MARCO;MERELLO, ANDREA
分类号 H01L27/04;H01L21/822;H02M1/00;H02M1/08;H02M1/32;H02M3/337;H03K17/08;H03K17/56;(IPC1-7):H02M1/08 主分类号 H01L27/04
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