| 摘要 |
An arrangement is described for compensation of a magnetic bias field in a storage layer of at least one magnetoresistive memory cell provided in a semiconductor device. In this arrangement, at least one compensation layer that is provided with a magnetization compensates for the bias field in the storage layer. A method is also described for compensation of a magnetic bias field in a storage layer of a magnetoresistive memory cell provided in a semiconductor device. A step is provided for applying a ferromagnetic compensation layer. In another step, a bias field is measured in terms of magnitude and direction. In another step, the bias field is compensated by magnetization of the compensation layer. |
