SEMICONDUCTOR DEVICE HAVING FLOATING GATE ELECTRODE WITH SIDEWALL NITRIDE LAYER AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to prevent the deformation of a floating gate electrode and to restrain the change of characteristics between devices by forming a nitride layer at both sidewalls of the floating gate electrode. CONSTITUTION: A floating gate electrode(103) is formed on a semiconductor substrate(101) via a tunnel insulating layer(102). A control gate electrode is formed on the floating gate electrode via an inter-electrode dielectric. The floating gate electrode is made of polycrystalline silicon. A nitride layer(108) is formed at both sidewalls of the floating gate electrode.