发明名称 METAL NITRIDE DEPOSITION BY ALD USING GETTERING REACTANT
摘要 The present methods provide tools for growing conformal metal thin films, including metal nitride, metal carbide and metal nitride carbide thin films. In particular, methods are provided for growing such films from aggressive chemicals. The amount of corrosive chemical compounds, such as hydrogen halides, is reduced during the deposition of transition metal, transition metal carbide, transition metal nitride and transition metal nitride carbide thin films on various surfaces, such as metals and oxides. Getter compounds protect surfaces sensitive to hydrogen halides and ammonium halides, such as aluminum, copper, silicon oxide and the layers being deposited, against corrosion. Nanolaminate structures incorporating metallic thin films, and methods for forming the same, are also disclosed.
申请公布号 EP1425435(A2) 申请公布日期 2004.06.09
申请号 EP20020798955 申请日期 2002.09.10
申请人 ASM INTERNATIONAL N.V.;ASM MICROCHEMISTRY OY 发明人 ELERS, KAI ERIK;LI, WEI-MIN
分类号 C23C16/34;C23C16/32;C23C16/36;C23C16/44;C23C16/455;H01L21/28;H01L21/285;H01L21/3205;H01L21/768;H01L23/52;H01L23/532;(IPC1-7):C23C16/455 主分类号 C23C16/34
代理机构 代理人
主权项
地址