发明名称 Voltage detection level correction circuit and semiconductor device
摘要 In a power supply voltage detection circuit using a reference potential generation circuit, as represented by a band gap reference circuit according to a prior art, the correction of dispersion in the detection level cannot be carried out after the completion of diffusion and assembly. Therefore, a power supply voltage detection circuit 4 is provided with a reference potential generation circuit 1, a divided voltage potential generation circuit 2 and a differential amplification circuit 3 for comparing the divided voltage potential to the reference potential. Furthermore, a ferroelectric memory 5 which stores correction data for correcting the reference potential, a data latch circuit 7 for storing correction data that has been read out, and a microcomputer logic unit 6 for controlling ferroelectric memory 5 as well as data latch circuit 7 are provided. The reference potential is altered according to correction data so that dispersion in the power supply voltage detection level is reduced.
申请公布号 US6747907(B2) 申请公布日期 2004.06.08
申请号 US20020307376 申请日期 2002.12.02
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO. LTD. 发明人 MANO YOSHITAKA;NAKANE JOJI
分类号 G11C11/22;G05F3/24;G11C5/14;G11C29/02;(IPC1-7):G11C11/22 主分类号 G11C11/22
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