发明名称 |
Method of reducing charge loss for nonvolatile memory |
摘要 |
A method of reducing charge loss for nonvolatile memory. First, a semiconductor substrate having a semiconductor device thereon is provided. Next, a dielectric layer is formed on the entire surface of the semiconductor substrate, and a thermal treatment is performed in an atmosphere containing a reactive gas, and the reactive gas reacts with free ions remaining on the semiconductor substrate from prior manufacturing processes. Finally, a metal layer is formed on the dielectric layer.
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申请公布号 |
US6746968(B1) |
申请公布日期 |
2004.06.08 |
申请号 |
US20030364428 |
申请日期 |
2003.02.12 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
TSENG UWAY;CHANG CHING-YU;CHIU HUNG-YU;LU WENPIN |
分类号 |
H01L21/28;H01L21/306;H01L21/3105;(IPC1-7):H01L21/31 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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