Storing data in non-volatile memory devices

摘要

Cells in a non-volatile memory are programmed in parallel using a variable program bandwidth. The variable program bandwidth is an automatic variation in the number of cells pulsed in parallel based upon a predefined electrical current provisioning capability. The variation in programming number may be based upon whether a program pulse represents an initial pulse or a re-pulse. Additionally, or alternatively, the variation in programming number may be based upon a cell level to be programmed by a pulse in a MLC device.