Plasma etching of dielectric layer with etch profile control

摘要

A semiconductor manufacturing process wherein high aspect ratio deep openings are plasma etched in a dielectric layer using an etchant gas which includes a fluorocarbon, a sulfur-containing gas, an oxygen-containing gas and an optional carrier gas. The etchant gas can include CxFyHz such as C4F8, SO2, O2 and Ar. The combination of the sulfur-containing gas and the oxygen-containing gas provides profile control of the deep openings.