发明名称 Method for forming film
摘要 In a film-forming process of depositing gaseous molecules each composed of plural atoms onto a substrate or reacting the gaseous molecules with the constituting elements of the substrate to form a compound film onto the substrate, the plasma, having excited inert gaseous molecules with higher metastable excited states than the ones required to dissociate the gaseous molecules into their elements and the gaseous molecules, is generated and then, the gaseous molecules are dissociated into their elements before being deposited into the substrate. As a result, dissociation of the gaseous molecules onto the substrate is not required, leading to lowering the temperature of the film-forming process.
申请公布号 US6746726(B2) 申请公布日期 2004.06.08
申请号 US20000646988 申请日期 2000.11.16
申请人 TOKYO UNIVERSITY OF AGRICULTURE & TECHNOLOGY 发明人 UENO TOMO
分类号 H01L21/31;B01J19/08;C23C16/24;C23C16/40;C23C16/452;C23C16/50;C23C16/511;C23C26/00;H01L21/314;H01L21/316;H01L21/318;(IPC1-7):H05H1/24 主分类号 H01L21/31
代理机构 代理人
主权项
地址