| 摘要 |
A semiconductor device having a memory cell including first and second load transistors, first and second driver transistors, and first and second transfer transistors. The semiconductor device includes first and second gate-gate electrode layers, first and second drain-drain wiring layers, and first and second drain-gate wiring layers. The first drain-gate wiring layer and the second drain-gate wiring layer are located in different layers. The first drain-gate wiring layer is located below the first drain-drain wiring layer, and the second drain-gate wiring layer is located in above the first drain-drain wiring layer. This structure provides a semiconductor device that has reduced cell area. The invention also provides a memory system and electronic apparatus that include the above semiconductor device.
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