发明名称 Magnetic memory cell
摘要 A memory cell includes a magnetic data storage layer, a magnetic reference layer, and an insulating layer between the data storage layer and the reference layer. A resistive layer having a known electrical resistance is positioned adjacent the insulating layer.
申请公布号 US6747335(B1) 申请公布日期 2004.06.08
申请号 US20030355787 申请日期 2003.01.31
申请人 HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. 发明人 BLOOMQUIST DARREL R.
分类号 H01L27/105;H01L21/8246;H01L27/22;H01L29/00;H01L43/08;(IPC1-7):H01L29/00 主分类号 H01L27/105
代理机构 代理人
主权项
地址