发明名称 Semiconductor charge pump circuit and nonvolatile semiconductor memory device
摘要 A charge pump circuit includes inverters INV1 and INV2. The inverter INV1 receives a clock signal CLK2, and applies a voltage waveform at an immediately previous node to a second end of a capacitor connected to a transistor and to the p-well thereof. The voltage of the capacitor on the side of the control terminal of the transistor, and the voltage waveform at the node, are raised with the same phase timing as the clock signal CLK1. The inverter INV2 receives a clock signal CLK1, and applies a voltage waveform at an immediately previous node to a second end of another capacitor connected to another transistor and to the p-well thereof. The voltage of the another capacitor on the side of the control terminal of the another transistor, and the voltage waveform at the node, are raised with the same phase timing as the clock signal CLK2.
申请公布号 US6747897(B2) 申请公布日期 2004.06.08
申请号 US20020208172 申请日期 2002.07.29
申请人 SHARP KABUSHIKI KAISHA 发明人 KARAKI SATORU
分类号 G11C16/06;G11C5/14;G11C16/04;H01L21/822;H01L27/04;H01L27/105;H01L27/108;H01L27/115;H02M3/07;(IPC1-7):G11C16/04 主分类号 G11C16/06
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