发明名称 Temperature controlling method, thermal treating apparatus, and method of manufacturing semiconductor device
摘要 A temperature control method is provided which is capable of performing quick, accurate, and error-free soaking control over all wafer areas to be thermally treated at a target temperature without requiring any skilled operator and which can be automated by using a computer. In the temperature control method of controlling a heating apparatus having at least two heating zones in such a manner that temperatures detected at predetermined locations equal a target temperature therefor, temperatures are detected at predetermined locations the number of which is larger than the number of the heating zones, and the heating apparatus is controlled in such a manner that the target temperature falls between a maximum value and a minimum value of a plurality of detected temperatures.
申请公布号 US6746908(B2) 申请公布日期 2004.06.08
申请号 US20010964863 申请日期 2001.09.28
申请人 HITACHI KOKUSAI ELECTRIC, INC. 发明人 TANAKA KAZUO;UENO MASAAKI;NAKANO MINORU;YAMAGUCHI HIDETO
分类号 H01L21/22;C23C16/46;C30B25/16;C30B31/18;F27D19/00;G05D23/22;H01L21/00;H01L21/324;(IPC1-7):H01L21/823 主分类号 H01L21/22
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