发明名称 |
Ferroelectric vapor deposition targets |
摘要 |
The invention includes a ferroelectric physical vapor deposition target having a predominate grain size of less than or equal to 1.0 micron, and a density of at least 95% of maximum theoretical density. A method of making the target includes hot pressing a prereacted ferroelectric powder predominately including individual prereacted ferroelectric particles having a maximum straight linear dimension of less than or equal to 100 nanometers to form a physical vapor deposition target of desired shape. In one implementation, the prereacted ferroelectric powder is hot pressed at a maximum pressing temperature which is at least 200° C. lower than would be required to produce at least 85% of maximum theoretical density in hot pressing the same powder but having a predominate particle size maximum straight linear dimension of at least 1.0 micron at the same pressure and for the same amount of time.
|
申请公布号 |
US6746619(B2) |
申请公布日期 |
2004.06.08 |
申请号 |
US20030422112 |
申请日期 |
2003.04.23 |
申请人 |
HONEYWELL INTERNATIONAL INC. |
发明人 |
LI JIANXING;SCOTT TIM;WHITE TAMARA |
分类号 |
C04B35/462;C23C14/08;C23C14/34;(IPC1-7):C04B35/001 |
主分类号 |
C04B35/462 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|