发明名称 High frequency semiconductor device
摘要 A high frequency semiconductor device includes a ground plate, an insulating layer, a power-supply conductor, an insulating interlayer, and a strip line as a line conductor. The power-supply conductor is disposed above the ground plate, with the insulating layer provided therebetween. The ground plate and the power-supply conductor have a capacitance formed therebetween. Thus, the line conductor regards the power-supply conductor as having a potential identical to that of the ground plate. This makes it possible to lay out the line conductor without considering the arrangement of the power-supply conductor. In other words, by two-dimensionally overlapping a microstrip line and a power-supply conductor in an MMIC, the degree of freedom in the device layout can be increased.
申请公布号 US6747299(B2) 申请公布日期 2004.06.08
申请号 US20020090633 申请日期 2002.03.06
申请人 FUJITSU QUANTUM DEVICES LIMITED 发明人 MIMINO YUTAKA;BABA OSAMU;AOKI YOSHIO;GOTOH MUNEHARU
分类号 H01L23/52;H01L21/312;H01L21/318;H01L21/3205;H01L21/82;H01L21/822;H01L23/522;H01L23/528;H01L27/04;(IPC1-7):H01L21/338 主分类号 H01L23/52
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