| 摘要 |
PURPOSE: A method for fabricating a semiconductor device using a pattern with 3-dimensional structure is provided to simplify a semiconductor fabrication process by performing repeatedly an etch process and a deposition process. CONSTITUTION: An insulating layer(204) such as a SiO2 layer is deposited on a substrate(200). A three-dimensional structure material such as SiNx is deposited on the insulating layer(204). A sacrificial layer pattern(208) having a three-dimensional structure is formed on the three-dimensional structure material. A part of the three-dimensional structure material is selectively exposed by etching the sacrificial layer pattern(208). The exposed portion of the three-dimensional structure material is selectively etched. A three-dimensional structure pattern is formed by performing repeatedly the etch process and the deposition process of the sacrificial layer pattern(208) and the exposed portion of the three-dimensional structure material.
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