| 摘要 |
PURPOSE: A bonded SOI(Silicon On Insulator) wafer and a manufacturing method thereof are provided to restrain the generation of voids by forming a convexoconcave structure at an oxide layer of the SOI wafer. CONSTITUTION: A convexoconcave portion(13) is partially formed at an oxide layer(11), wherein the oxide layer is formed in an SOI wafer. Preferably, the width(W) of the convexoconcave portion is in the range of 10 μm to 1 mm. The surface area of the oxide layer bonded with a silicon wafer is in the range of 100 cm2, or less. Preferably, the convexoconcave portion is formed at a dicing object portion of the SOI wafer for manufacturing a semiconductor device at the post-process.
|
